Among semiconductor materials, aluminum nitride (AlN) has large bandgap of 6.2 eV [ 52 ], [ 53 ], and wide transparency window covering from ultraviolet
Here we report the integration of aluminum nitride (AlN) films on silicon substrates to bring active functionalities to chip-scale photonics. Using CMOS-compatible
Aluminum nitride (AlN) is a promising material for thermal management in 3D integrated circuits (ICs) due to its high thermal conductivity. However, achieving
In this review, we aim to present recent advances achieved in AlN photonic integrated circuits ranging from material processing and passive optical routing to active functionality implementation such as electro-optics,
A promising solution is to include all components, e.g. single photon sources, quantum circuits, and detectors, in a photonic integrated circuit (PIC), which provides
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large χ(2) nonlinearity. Here we demonstrate the hybrid integration of
Photonic Integrated Circuits (PICs) play a crucial role in shaping the future of quantum technology, communications, and sensor applications. With a transparency window